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Resource Abstract:
- Lightning induced damage is one of the major concerns in aircraft health monitoring. Such short-duration high voltages can
cause significant damage to electronic devices. This paper presents a study on the effects of lightning injection on power
metal-oxide semiconductor field effect transistors (MOSFETs). This approach consisted of pin- injecting lightning waveforms
into the gate, drain and/or source of MOSFET devices while they were in the OFF-state. Analysis of the characteristic curves
of the devices showed that for certain injection modes the devices can accumulate considerable damage rendering them inoperable.
Early results demonstrate that a power MOSFET, even in its off-state, can incur considerable damage due to lightning pin injection,
leading to significant deviation in its behavior and performance, and to possibly early device failures.
Citation
- Title Effects of Lightning Injection on Power-MOSFETs
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- revision Date
2013-06-19T20:54:18
Resource language:
[u'en-US']
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point of contact
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publisher
- individual Name {u'hasEmail': u'mailto:miryam.strautkalns@nasa.gov', u'fn': u'Miryam Strautkalns'}
- organisation Name
{u'subOrganizationOf': {u'subOrganizationOf': {u'name': u'U.S. Government'}, u'name': u'National Aeronautics and Space Administration'},
u'name': u'Dashlink'}
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Metadata data stamp:
2013-06-19T20:54:18
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dataset
Metadata standard for this record:
ISO 19115:2003 - Geographic information - Metadata
standard version:
ISO 19115:2003
Metadata record identifier:
DASHLINK_767
Metadata record format is ISO19139 XML (MD_Metadata)